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* 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche.

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI20N06L

FQI22P10

FQI24N08

FQI27N25

FQI27N25TU-F085

FQI27N25TU_F085

FQI27P06

FQI28N15

FQI2N30

FQI2N50

FQI2N60

FQI2N80

FQI2N90