logo

FQI47P06 Datasheet, Fairchild Semiconductor

FQI47P06 Datasheet, Fairchild Semiconductor

FQI47P06

datasheet Download (Size : 718.90KB)

FQI47P06 Datasheet

FQI47P06 mosfet equivalent, 60v p-channel mosfet.

FQI47P06

datasheet Download (Size : 718.90KB)

FQI47P06 Datasheet

Features and benefits


*
*
*
*
*
*
* -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalan.

Application

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQI47P06 Page 1 FQI47P06 Page 2 FQI47P06 Page 3

TAGS

FQI47P06
60V
P-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

Related datasheet

FQI44N08

FQI44N10

FQI45N15V2

FQI46N15

FQI4N20

FQI4N20L

FQI4N25

FQI4N50

FQI4N60

FQI4N65

FQI4N80

FQI4N90

FQI4P25

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts