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* 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI4N65

FQI4N20

FQI4N20L

FQI4N25

FQI4N50

FQI4N80

FQI4N90

FQI44N08

FQI44N10

FQI45N15V2

FQI46N15

FQI47P06

FQI4P25