FQI4N90 mosfet equivalent, 900v n-channel mosfet.
* 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A
* Low Gate Charge (Typ. 24 nC)
* Low Crss (Typ. 9.5 pF)
* 100% Avalanche Tested
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GDS
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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