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FQI5N20L Datasheet - Fairchild Semiconductor

FQI5N20L 200V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQI5N20L Features

* 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from log

FQI5N20L_FairchildSemiconductor.pdf