FQI5N50C datasheet, mosfet equivalent, Fairchild Semiconductor

FQI5N50C Features and benefits

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* 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Im.

FQI5N50C Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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FQI5N50C

N-Channel

MOSFET

Fairchild Semiconductor

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FQI5N50C Datasheet, mosfet equivalent, Fairchild Semiconductor

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FQI5N50C Features and benefits

FQI5N50C Description