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FQI8N60C N-Channel MOSFET

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Description

FQB8N60C / FQI8N60C * N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested
* RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. S

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N-Channel MOSFET ON Semiconductor
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