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FQI8N60C Datasheet - ON Semiconductor

FQI8N60C-ONSemiconductor.pdf

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Datasheet Details

Part number:

FQI8N60C

Manufacturer:

ON Semiconductor ↗

File Size:

754.28 KB

Description:

N-channel mosfet.

FQI8N60C, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt

FQI8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. S

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