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FQI10N60C - 600V N-Channel MOSFET

FQI10N60C Description

FQB10N60C / FQI10N60C QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI10N60C Features

* 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK FQB Series I2-PAK G D S FQI Seri

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600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI10N60C-like datasheet

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