Datasheet4U Logo Datasheet4U.com

FQI7N60 - N-Channel MOSFET

FQI7N60 Description

MOSFET * N-Channel, QFET 600 V, 7.4 A, 1.0 W FQB7N60, FQI7N60 .
This N. Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

FQI7N60 Features

* 7.4 A, 600 V, RDS(on) = 1.0 W (Max. ) @ VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise not

📥 Download Datasheet

Preview of FQI7N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQI7N10 - 100V N-Channel MOSFET (Fairchild Semiconductor)
  • FQI7N10L - 100V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
  • FQI7N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • FQI7N20L - 200V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
  • FQI7N30 - 300V N0Channel MOSFET (Fairchild Semiconductor)
  • FQI7N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • FQI7N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
  • FQI70N08 - 80V N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

N-Channel MOSFET ON Semiconductor
ON Semiconductor FQI7N60-like datasheet

FQI7N60 Stock/Price