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FQI7N10 - 100V N-Channel MOSFET

FQI7N10 Description

FQB7N10 / FQI7N10 December 2000 QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI7N10 Features

* 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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Datasheet Details

Part number
FQI7N10
Manufacturer
Fairchild Semiconductor
File Size
548.34 KB
Datasheet
FQI7N10_FairchildSemiconductor.pdf
Description
100V N-Channel MOSFET

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100V N-Channel MOSFET Fairchild Semiconductor
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