FQI7N60 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB7N60 / FQI7N60 * N-Channel QFET® MOSFET May 2014 FQB7N60 / FQI7N60 N-Channel QFET® MOSFET 600 V, 7.4 A, 1.0 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQI7N60
Manufacturer: Fairchild Semiconductor
File Size: 885.94 KB
Datasheet: FQI7N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM

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FQI7N60 600V N-Channel MOSFET Fairchild Semiconductor

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