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FQI5N60C - N-Channel MOSFET

FQI5N60C Description

FQI5N60C * N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQI5N60C Features

* 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max. ) @VGS = 10 V, ID = 2.1 A
* Low Gate Charge (Typ. 15 nC)
* Low Crss (Typ. 6.5 pF)

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N-Channel MOSFET ON Semiconductor
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