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FQI5N60 - 600V N-Channel MOSFET

FQI5N60 Description

FQB5N60 / FQI5N60 April 2000 QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI5N60 Features

* 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI5N60
Manufacturer
Fairchild Semiconductor
File Size
554.00 KB
Datasheet
FQI5N60_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor
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