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FQI11N40 - 400V N-Channel MOSFET

FQI11N40 Description

FQB11N40 / FQI11N40 November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI11N40 Features

* 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI11N40-like datasheet

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