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FQI11N40C Datasheet - Fairchild Semiconductor

FQI11N40C 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI11N40C Features

* 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 85pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " !

FQI11N40C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQI11N40C

Manufacturer:

Fairchild Semiconductor

File Size:

659.63 KB

Description:

400v n-channel mosfet.

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FQI11N40C FQI11N40C 400V N-Channel MOSFET Fairchild Semiconductor

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