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FQI10N20C Datasheet - Fairchild Semiconductor

FQI10N20C 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI10N20C Features

* 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " !

FQI10N20C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQI10N20C

Manufacturer:

Fairchild Semiconductor

File Size:

608.82 KB

Description:

200v n-channel mosfet.

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FQI10N20C FQI10N20C 200V N-Channel MOSFET Fairchild Semiconductor

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