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FQI10N20L - 200V LOGIC N-Channel MOSFET

FQI10N20L Description

FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI10N20L Features

* 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic

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Datasheet Details

Part number
FQI10N20L
Manufacturer
Fairchild Semiconductor
File Size
574.05 KB
Datasheet
FQI10N20L_FairchildSemiconductor.pdf
Description
200V LOGIC N-Channel MOSFET

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200V LOGIC N-Channel MOSFET Fairchild Semiconductor
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