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FQI85N06 - 60V N-Channel MOSFET

FQI85N06 Description

FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI85N06 Features

* 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typically 86 nC) Low Crss ( typically 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! "

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60V N-Channel MOSFET Fairchild Semiconductor
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