FQI8N25 250V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB8N25 / FQI8N25 May 2000 QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI8N25
Manufacturer: Fairchild Semiconductor
File Size: 593.85 KB
Datasheet: FQI8N25_FairchildSemiconductor.pdf
Description: 250V N-Channel MOSFET

Features

* 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

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250V N-Channel MOSFET Fairchild Semiconductor

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