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FQI8P10 Datasheet - Fairchild Semiconductor

FQI8P10_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQI8P10

Manufacturer:

Fairchild Semiconductor

File Size:

667.17 KB

Description:

100v p-channel mosfet.

FQI8P10, 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI8P10 Features

* -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQ

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