FQI8P10 100V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB8P10 / FQI8P10 QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI8P10
Manufacturer: Fairchild Semiconductor
File Size: 667.17 KB
Datasheet: FQI8P10_FairchildSemiconductor.pdf
Description: 100V P-Channel MOSFET

Features

* -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQ

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100V P-Channel MOSFET Fairchild Semiconductor

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