Datasheet Details
- Part number
- FQI8P10
- Manufacturer
- Fairchild Semiconductor
- File Size
- 667.17 KB
- Datasheet
- FQI8P10_FairchildSemiconductor.pdf
- Description
- 100V P-Channel MOSFET
FQI8P10 Description
FQB8P10 / FQI8P10 QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
FQI8P10 Features
* -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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D2-PAK
FQ
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