FQN1N50C - N-Channel QFET MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQN1N50C
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.74 MB
Description	N-Channel QFET MOSFET
Datasheet	FQN1N50C-FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A.
Low Gate Charge (Typ. 4.9 nC).
Low Crss (Typ. 4.1 pF).
100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Curren.

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Published: Nov 14, 2014 |