FQP19N10L datasheet, mosfet equivalent, Fairchild Semiconductor

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FQP19N10L Features and benefits

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* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche t.

FQP19N10L Application

such as high efficiency switching DC/DC converters, and DC motor control. TM Features
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FQP19N10L Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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