FQP8N80C datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 1.10MB)

FQP8N80C Features and benefits

* 8.0 A, 800 V, RDS(on) = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 13 pF)
* 100% Avalanche Tested D GDS T.

FQP8N80C Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

Image gallery