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* 8.7A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanch.

such as high efficiency switching DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQPF13N10

FQPF13N06

FQPF13N06L

FQPF13N50

FQPF13N50C

FQPF13N50CF

FQPF10N20

FQPF10N20C

FQPF10N50CF

FQPF10N60

FQPF10N60C

FQPF10N60CF

FQPF10N65