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FQPF4N90 Datasheet - Fairchild Semiconductor

900V N-Channel MOSFET

FQPF4N90 Features

* 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F IRFS Series ! S Absolute Maximum Ra

FQPF4N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF4N90 Datasheet (621.35 KB)

Preview of FQPF4N90 PDF

Datasheet Details

Part number:

FQPF4N90

Manufacturer:

Fairchild Semiconductor

File Size:

621.35 KB

Description:

900v n-channel mosfet.

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FQPF4N90 900V N-Channel MOSFET Fairchild Semiconductor

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