* 40 A, 60 V, RDS(on) = 16 mΩ (Max.) @ VGS = 10 V, ID = 20 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 100 pF)
* 100% Avalanche Tested
* 175°C M.

November 2013 Features
* 40 A, 60 V, RDS(on) = 16 mΩ (Max.) @ VGS = 10 V, ID = 20 A
* Low Gate Charge (Typ. 48.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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