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FQPF9N08L Datasheet - Fairchild Semiconductor

FQPF9N08L - 80V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.

FQPF9N08L Features

* 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate d

FQPF9N08L_FairchildSemiconductor.pdf