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FQT1N60C Datasheet N-Channel QFET MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQT1N60C N-Channel MOSFET FQT1N60C 600V, 0.2 A, 11.5 Ω.

Key Features

  • 0.2 A, 600 V, RDS(on)=9.3 Ω(7S. )@VGS=10 V, ID=0.1 A.
  • Low Gate Charge (Typ.  nC).
  • Low Crss (Typ.  pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D S G G SOT-223 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
  • Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Pea.

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