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* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche teste.

such as high efficiency switching DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQU13N10

FQU13N06L

FQU10N20

FQU10N20C

FQU10N20L

FQU11P06

FQU12N20

FQU12N20L

FQU12P10

FQU14N15

FQU16N15

FQU17N08

FQU17N08L