FQU2N100 mosfet equivalent, 1000v n-channel mosfet.
* 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
* Low Gate Charge ( Typ. 12 nC)
* Low Crss ( Typ. 5 pF)
* 100% Avalanche Tested
* RoHS C.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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