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* 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche test.

such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQU7N10L

FQU7N20

FQU7N20L

FQU7N30

FQU7P06

FQU7P20

FQU10N20

FQU10N20C

FQU10N20L

FQU11P06

FQU12N20

FQU12N20L

FQU12P10