Datasheet4U Logo Datasheet4U.com

FQU7P06 60V P-Channel MOSFET

FQU7P06 Description

FQD7P06 / FQU7P06 May 2001 QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU7P06 Features

* -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !
* ▶ ▲
* G S D-PAK FQD Series I-PAK G D S FQU S

📥 Download Datasheet

Preview of FQU7P06 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)
  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)

📌 All Tags

Fairchild Semiconductor FQU7P06-like datasheet