FQU2N50B

N-Channel MOSFET

ON Semiconductor

FQU2N50B Features

* 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A

* Low Gate Charge (Typ. 6.0 nC)

* Low Crss (Typ. 4.3 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability D GDS I-PAK G Absolute Maximum Ratings TC = 25oC unless o

FQU2N50B General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQU2N50B Datasheet (850.08 KB)