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FQU2N50B - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FQU2N50B
Manufacturer	ON Semiconductor ↗
File Size	850.08 KB
Description	N-Channel MOSFET
Datasheet	FQU2N50B-ONSemiconductor.pdf

FQU2N50B Product details

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

1.6 A, 500 V, RDS(on) = 5.3 Ω (Max. ) @ VGS = 10 V, ID = 0.8 A.
Low Gate Charge (Typ. 6.0 nC).
Low Crss (Typ. 4.3 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability D GDS I-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Ga.

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Published: Jan 23, 2023 |