FQU2N90 - 900V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU2N90
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.35 MB
Description	900V N-Channel MOSFET
Datasheet	FQU2N90_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

1.7 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 0.85 A.
Low Gate Charge (Typ. 12 nC).
Low Crss (Typ. 5.5 pF).
100% Avalanche Tested.
RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol.
4 4.
< 4 < !5 8 Parameter .
0,-2.

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Published: Apr 1, 2005 |