FQU2N90

900V N-Channel MOSFET

Fairchild Semiconductor

FQU2N90 Features

* 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 0.85 A

* Low Gate Charge (Typ. 12 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Sy

FQU2N90 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQU2N90 Datasheet (1.35 MB)

FQU2N90 Datasheet Preview — Preview of FQU2N90 PDF

Datasheet Details

Part number:

FQU2N90

Manufacturer:

Fairchild Semiconductor

File Size:

1.35 MB

Description:

900v n-channel mosfet.

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FQU2N90 900V N-Channel MOSFET Fairchild Semiconductor

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FQU2N90 Features

FQU2N90 General Description

Datasheet Details

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Description:

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