FQU1N60C Datasheet, Mosfet, HAOHAI

FQU1N60C Features

• Mosfet 　　LOW ON-RESISTANCE 　　FAST SWITCHING 　　HIGH INPUT RESISTANCE 　　RoHS COMPLIANT 　　Package: TO-251 and TO-252（IPAK & DPAK） 　
• 　　、、、RoHS 　
• 　　、LCD、LED、、UPS 　　、、、、 　　、、 　　、

PDF File Details

Part number:

FQU1N60C

Manufacturer:

HAOHAI

File Size:

375.84kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

FQU1N60C

HAOHAI

📁 Related Datasheet

FQU1N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
FQD1N60 FQU1N60 FQI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using a.

FQU1N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Description This N-Channel enh.

FQU1N60C - N-Channel MOSFET (ON Semiconductor)
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET .onsemi. FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Features • 1 A, 600 V, .

FQU1N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQU1N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQU1N50B - 500V N-Channel MOSFET (Fairchild Semiconductor)
FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

FQU1N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran.

FQU10N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)

   
 
 
   
 
    
    
            .

FQU10N20 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·.