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FQU1N60 600V N-Channel MOSFET

FQU1N60 Description

FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU1N60 Features

* 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S

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Datasheet Details

Part number
FQU1N60
Manufacturer
Fairchild Semiconductor
File Size
543.80 KB
Datasheet
FQU1N60_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor
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