FQU1N60 Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FQU1N60 Features

* 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S

FQU1N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQU1N60 Datasheet (543.80 KB)