FQU1N60C

600V N-Channel MOSFET

Fairchild Semiconductor

FQU1N60C Features

* 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A

* Low Gate Charge (Typ. 4.8 nC)

* Low Crss (Typ. 3.5 pF)

* 100% Avalanche Tested

* RoHS Compliant D G S D-PAK G D S I-PAK G! D !

* ◀▲

* ! S Absolute Maximum Ratings TC = 25°C un

FQU1N60C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

FQU1N60C Datasheet (772.41 KB)