FQU2N60C Datasheet - ON Semiconductor

FQU2N60C N-Channel MOSFET

MOSFET N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic la.

FQU2N60C Features

* 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A

* Low Gate Charge (Typ. 8.5 nC)

* Low Crss (Typ. 4.3 pF)

* 100% Avalanche Tested

* These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol

FQU2N60C-ONSemiconductor.pdf