* 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested
* These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol
FQU2N60C Datasheet (449.88 KB)
FQU2N60C
449.88 KB
N-channel mosfet.
MOSFET
* N-Channel, QFET)
600 V, 1.9 A, 4,7 W
FQD2N60C / FQU2N60C
This N
*Channel enhancement mode power MOSFET is produced using onse.
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