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FQU2N60

600V N-Channel MOSFET

FQU2N60 Features

* 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S

FQU2N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQU2N60 Datasheet (561.15 KB)

Preview of FQU2N60 PDF

Datasheet Details

Part number:

FQU2N60

Manufacturer:

Fairchild Semiconductor

File Size:

561.15 KB

Description:

600v n-channel mosfet.

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FQU2N60 600V N-Channel MOSFET Fairchild Semiconductor

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