FQU2N100 Datasheet - Fairchild Semiconductor

FQU2N100 1000V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQU2N100 Features

* 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A

* Low Gate Charge ( Typ. 12 nC)

* Low Crss ( Typ. 5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol

FQU2N100_FairchildSemiconductor.pdf