FQU2N100 - 1000V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU2N100
Manufacturer	Fairchild ↗ Semiconductor
File Size	0.97 MB
Description	1000V N-Channel MOSFET
Datasheet	FQU2N100_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A.
Low Gate Charge ( Typ. 12 nC).
Low Crss ( Typ. 5 pF).
100% Avalanche Tested.
RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Vo.

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Published: Apr 1, 2005 |