* 2.4 A, 600 V, RDS(on) = 3.4 W (Max.) @ VGS = 10 V, ID = 1.2 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant Applications
* LCD / LED TV
* Lighting
FQU3N60CTU Datasheet (308.95 KB)
FQU3N60CTU
308.95 KB
N-channel mosfet.
FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N Channel enhancement mode power MOSFET is produced using ON Semiconductor’s propri.
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