FQU1N60C

N-Channel MOSFET

ON Semiconductor

FQU1N60C Features

* 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A

* Low Gate Charge (Typ. 4.8 nC)

* Low Crss (Typ. 3.5 pF)

* 100% Avalanche Tested

* RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s prop

FQU1N60C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQU1N60C Datasheet (523.97 KB)