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FQU11P06

60V P-Channel MOSFET

FQU11P06 Features

* -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS

FQU11P06 General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQU11P06 Datasheet (1.22 MB)

Preview of FQU11P06 PDF

Datasheet Details

Part number:

FQU11P06

Manufacturer:

Fairchild Semiconductor

File Size:

1.22 MB

Description:

60v p-channel mosfet.

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FQU11P06 60V P-Channel MOSFET Fairchild Semiconductor

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