FQU1N80 800V N-Channel MOSFET

Fairchild Semiconductor

Description

FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQU1N80
Manufacturer: Fairchild Semiconductor
File Size: 635.94 KB
Datasheet: FQU1N80_FairchildSemiconductor.pdf
Description: 800V N-Channel MOSFET

Features

* 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V Low gate charge ( typical 5.5nC) Low Crss ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso

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FQU1N80 800V N-Channel MOSFET Fairchild Semiconductor

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