FQU9N25

N-Channel MOSFET

ON Semiconductor

FQU9N25 Features

* 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V, ID = 3.7 A

* Low Gate Charge (Typ. 15.5 nC)

* Low Crss (Typ. 15 pF)

* 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol , 5 5 , < 5 <

FQU9N25 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQU9N25 Datasheet (0.99 MB)