FQU2N80 - 800V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU2N80
Manufacturer	Fairchild ↗ Semiconductor
File Size	639.00 KB
Description	800V N-Channel MOSFET
Datasheet	FQU2N80_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S 3 D-PAK FQD Series I-PAK G D S FQU Series " " 5 ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

📁 FQU2N80 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |