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FQU2N80

800V N-Channel MOSFET

FQU2N80 Features

* 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S 3 D-PAK FQD Series I-PAK G D S FQU Series " " 5 ! S

FQU2N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQU2N80 Datasheet (639.00 KB)

Preview of FQU2N80 PDF

Datasheet Details

Part number:

FQU2N80

Manufacturer:

Fairchild Semiconductor

File Size:

639.00 KB

Description:

800v n-channel mosfet.

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TAGS

FQU2N80 800V N-Channel MOSFET Fairchild Semiconductor

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