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FSGL134R - Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

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Fairchild Semiconductor

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FSGL134R Radiation Hardened / SEGR Resistant N-Channel Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FSGL134R

Datasheet Details

Part number	FSGL134R
Manufacturer	Fairchild Semiconductor
File Size	218.23 KB
Description	Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
Datasheet	FSGL134R Datasheet
Additional preview pages of the FSGL134R datasheet.

Product details

Features

10A, 150V, rDS(ON) = 0.125Ω.
UIS Rated.
Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
Photo Current - 2nA Per-RAD (Si)/s Typically.
Neutron - M.

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Published: Jan 21, 2009 |