of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss .

HGT1S12N60C3DS

HGT1S12N60C3S

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60B3DS

HGT1S12N60B3S

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S14N36G3VL

HGT1S14N36G3VLS

HGT1S14N37G3VLS

HGT1S14N40F3VLS