of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.

operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Featu.

HGT1S12N60C3

HGT1S12N60C3S

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60B3DS

HGT1S12N60B3S

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S14N36G3VL

HGT1S14N36G3VLS

HGT1S14N37G3VLS

HGT1S14N40F3VLS