of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

HGTG20N60A4D

HGTG20N60B3

HGTG20N60B3D

HGTG20N60C3

HGTG20N60C3D

HGTG20N60C3R

HGTG20N100D2

HGTG20N120

HGTG20N120C3D

HGTG20N120CN

HGTG20N120CND

HGTG20N120E2

HGTG20N50C1D